Characterization of Thin-Film Copper/Cuprous Oxide Photovoltaic Cell by Thermal Oxidation
Resumen
Copper-Cuprous Oxide (Cu2O/Cu) thin film photovoltaic cells were fabricated using thermal oxidation method for the Cu2O deposition. The copper sheet approximately ~1mm thick, were oxidized in air at a temperature between 900oC – 1050oC. Oxide films formed between temperatures 1000°C and 1050°C were observed to consist entirely of Cu2O and showed p-type semiconductor while those grown below 900°C consists of a mixture of cupric oxide (CuO, though not strictly considered in this paper. In addition, the junctions on Cu2O were prepared by graphite carbon paste method obtained from used dry cells. The graphs of current – voltage and capacitance – voltage characteristics of schottky barrier diode obtained from the fabrication are presented. The results obtained indicate that cells of possible practical interest will have an oxide of a micron grown at relatively high temperatures. It was also deduced that the copper/cuprous oxide fabricated by the thermal oxidation method is a metal – semiconductor (or Schottky) diode with all the characteristics.
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Referencias
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